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PHOTO AND CATHODOLUMINESCENCE OF Si/SiO2 NANOPARTICLES PRODUCED BY LASER ABLATION

C. Grigoriu1,* , Y. Kuroki2, I. Nicolae1, X. Zhu2, M. Hirai2, H. Suematsu2, M. Takata2, K. Yatsui2

Affiliation

  1. National Institute for Laser, Plasma and Radiation Physics, Bucharest, MG-36, Romania
  2. Nagaoka University of Technology, Nagaoka, 940-2188 Niigata, Japan

Abstract

Photo and cathodoluminescence of Si/SiO2 nanoclusters produced by laser ablation is reported. The study was made on untreated nanopowders (size 2-10 nm, 64% of primary nanoparticles < 5 nm), aged 18 months in normal atmospheric conditions. Photoluminescence spectra at room temperature and 77 K revealed a broadband spectrum (two bands 1.8 and 2.5 eV) in an approximate range from 400 nm to more than 800 nm. The maximum intensity emission of the main band, measured at room temperature (RT), is centered at ~ 690 nm. At 77 K the photoluminescence emission peak increased by a factor of 3, and intensities for shorter wavelengths increased too (the luminescence color changed from red to orange). The cathodoluminescence spectra measured at 5 kV-30 kV, presents also two band components, 1.75 and 2.5 eV. When the accelerating voltage is increased, the main peak intensity (1.75 eV) increases dramatically, without changing the shape of the emission profile, whereas the second band intensity remains unchanged..

Keywords

Nanocrystals, Nanoparticles, Silicon, Photoluminescence, Cathodoluminescence, Quantum dots.

Submitted at: Sept. 15, 2005
Accepted at: Nov. 24, 2005

Citation

C. Grigoriu, Y. Kuroki, I. Nicolae, X. Zhu, M. Hirai, H. Suematsu, M. Takata, K. Yatsui, PHOTO AND CATHODOLUMINESCENCE OF Si/SiO2 NANOPARTICLES PRODUCED BY LASER ABLATION, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 6, pp. 2979-2984 (2005)