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PHOTODARKENING RELAXATION IN AMORPHOUS As2Se3 FILMS DOPED WITH RARE-EARTH IONS

M. S. Iovu1,* , P. Boolchand2, D. G. Georgiev2

Affiliation

  1. Center of Optoelectronics of the Institute of Applied Physics, Academy of Sciences of Moldova, Str. Academiei 1, MD-2028 Chisinau, Republic of Moldova
  2. University of Cincinnati, Cincinnati, Ohio 45221-0030, USA

Abstract

The effect of rare-earth ions (Nd3+, Sm3+, Dy3+, Ho3+, Er3+, and Pr3+) in amorphous As2Se3 thin films on the photodarkening relaxation was investigated. The photodarkening amplitude depends on the kind and concentration of rare-earth dopant, as well as on the thickness of the sample and heat treatment. The photodarkening kinetics is described by a stretched exponential function with the dispersion parameter 0<αααα<1.0, which indicates high dispersion of the relaxation process in as-deposited and annealed chalcogenide films. The effect of impurities is manifested mainly through retardation of the photodarkening in doped samples, which leads to the increasing of the time constant of the process..

Keywords

Amorphous thin films, Photodarkening, Rare-earth ions.

Submitted at: Jan. 12, 2005
Accepted at: March 23, 2005

Citation

M. S. Iovu, P. Boolchand, D. G. Georgiev, PHOTODARKENING RELAXATION IN AMORPHOUS As2Se3 FILMS DOPED WITH RARE-EARTH IONS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 2, pp. 763-770 (2005)