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Photodetectors based on heterojunctions of metal - chalcogenide vitreous semiconductors

I. P. KORNEVA1, K. P. KORNEV1, M. OSTAFIN2,* , B. NOGAJ2

Affiliation

  1. Kaliningrad State University, 236041 Kaliningrad, Nevskogo 14, Russia
  2. Department of Physics, Adam Mickiewicz University, Umultowska 85, 61-614 Pozna , Poland

Abstract

A method for preparation of photodetectors based on SnO2-As2(Se0.9Te0.1)3 and SnO2-(As0.67Sb0.33)2Se3 heterojunctions is described. The results of investigation of the current–voltage, lux-ampere and spectral characteristics of the photodetectors obtained are presented..

Keywords

Heterojunctions, Glassy semiconductors, Thin films, Photoconductivity.

Submitted at: Dec. 12, 2005
Accepted at: March 23, 2006

Citation

I. P. KORNEVA, K. P. KORNEV, M. OSTAFIN, B. NOGAJ, Photodetectors based on heterojunctions of metal - chalcogenide vitreous semiconductors, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 2, pp. 808-810 (2006)