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PHOTOELECTRICAL PROPERTIES OF HETEROJUNCTIONS CONNECTED WITH VAN-DER-WAALS FORCES

Z. D. Kovalyuk1, V. M. Katerynchuk1,* , O. M. Sydor1

Affiliation

  1. Chernivtsi Department of the Institute of Materials Science Problems, the National Academy of Sciences of Ukraine, 5, Iryna Vilde St., 58001 Chernivtsi, Ukraine

Abstract

The layered structure of InSe with weak Van-der-Waals interlayer bonds allows: i) to get substrates of micron thickness with perfect mirror-like cleaved surfaces without any treatment; ii) to create high quality heterostructures by a simple method of thermal oxidation of the substrates; iii) to form simultaneously heterostructures on the opposite sides of the substrate with quasiidentical parameters and, therefore, realize the phototransistor effect. Here we investigate a double surface-barrier oxide-InSe-oxide heterostructure. The intrinsic oxide was grown in air at 450 during 96 h. Owing to metallic conductivity and high transparency of the created oxides, the formation of a potential barrier with the crystal of about 0.55-0.6 V is provided. The current-voltage characteristic of the oxide-InSe heterostructure is close to ideal one and its photosensitivity was observed in the spectral range 0.6-1 µm. The photoelectrical properties of the double heterostructure with Van-der Waals bond are investigated in dependence on substrate thickness. It is detected that the phototransistor effect is observed over the wide range of InSe thickness from 14 to 220 µm. At illumination of such kind phototransistor a high photocurrent density of about 60-100 m /cm2 is achieved that is evidence of amplifying electrical signal. The amplification factor depends on illumination level..

Keywords

InSe, Intrinsic oxide, Phototransistor, Photoelectrical properties.

Submitted at: June 14, 2004
Accepted at: March 23, 2005

Citation

Z. D. Kovalyuk, V. M. Katerynchuk, O. M. Sydor, PHOTOELECTRICAL PROPERTIES OF HETEROJUNCTIONS CONNECTED WITH VAN-DER-WAALS FORCES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 2, pp. 903-906 (2005)