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PHOTOINDUCED CHANGES IN Ge-As-S THIN FILMS WITH VARIOUS NETWORK RIGIDITIES

D. Arsova1,* , E. Skordeva1, V. Pamukchieva1, E. Vateva1

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

Photo- and thermally induced changes in the optical bandgap and thickness are investigated in thin films that belong to three lines traced through regions with different rigidities in the Ge-As-S system. The dependences of the photo- and thermally induced bleaching of the fresh films on the average coordination number, as well as of the photodarkening of the annealed films, show a global maximum in the range 2.6 - 2.7..

Keywords

Chalcogenide films, Thermal and photoinduced bleaching, Reversible photodarkening, Volume changes.

Submitted at: April 12, 2005
Accepted at: May 26, 2005

Citation

D. Arsova, E. Skordeva, V. Pamukchieva, E. Vateva, PHOTOINDUCED CHANGES IN Ge-As-S THIN FILMS WITH VARIOUS NETWORK RIGIDITIES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1259-1264 (2005)