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PHOTOINDUCED CHANGES IN THE VALENCE BAND STATES OF GeXAs40-XS60 THIN FILMS

D. Gonbeau1, V. Pamukchieva2,* , R. Dedryvere1, E. Skordeva2, D. Arsova2

Affiliation

  1. Laboratoire de Chimie Théorique et Physico-Chimie Moléculaire UMR 5624, 2 avenue du Président Angot, 64053 Pau Cedex 09, France
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

Valence band states of GexAs40-XS60 glasses and amorphous films are obtained by means of X-ray photoelectron spectroscopy. Differences between the broad bands in the spectra, connected with differences in the composition as well as with structural changes initiated by illumination and/or annealing are identified and discussed..

Keywords

X-ray photoelectron spectroscopy, Amorphous Ge-As-S, thin films.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

D. Gonbeau, V. Pamukchieva, R. Dedryvere, E. Skordeva, D. Arsova, PHOTOINDUCED CHANGES IN THE VALENCE BAND STATES OF GeXAs40-XS60 THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 341-344 (2005)