"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

PHOTOLITHOGRAPHIC STRUCTURING WITH EVAPORATED INORGANIC PHOTORESIST

B. Mednikarov1,* , M. Sahatchieva1

Affiliation

  1. Central Laboratory of Photoprocesses – Bulgarian Academy of Sciences Acad.”G. Bonchev” str. Bl 109, Sofia, Bulgaria

Abstract

A photolithographic material based on vacuum evaporated layers of the chalcogenide semiconductor As2S3 and a technology for the creation of precise photolithographic images on different substrates is developed in the Central Laboratory of Photoprocesses (CLF) at the Bulgarian Academy of Sciences (BAS). The photoresist has several advantages over the classical organic photolithographic materials. Here, the possibility of getting precise microstructures on chromium and AlN layers as well as on glass substrates by means of the evaporated photoresist is shown..

Keywords

Photolithography, Inorganic photoresist, Microstructures, As2S3, AlN, Glass.

Submitted at: April 25, 2005
Accepted at: May 26, 2005

Citation

B. Mednikarov, M. Sahatchieva, PHOTOLITHOGRAPHIC STRUCTURING WITH EVAPORATED INORGANIC PHOTORESIST, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1415-1419 (2005)