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PHOTOLUMINESCENCE IN Er-IMPLANTED AMORPHOUS Ge-S-Ga THIN FILMS

Z. G. Ivanova1,* , K. Koughia2, D. Toncheva2, J. C. Pivin3, S. O. Kasap2

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria
  2. Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, S7N 5A9, Canada
  3. Centre de Spectrométrie Nucléaire et de Spectrométrie de Masse, 108 Bâtiment, 91405 Orsay Campus, France

Abstract

The photoluminescence (PL) properties of Er-doped amorphous layers have been investigated. The Er3+ ions with fluences of 1015, 2×1015, 5×1015 and 1016 ions cm-2 have been embedded by a subsequent ion implantation into freshly deposited films. The Rutherford backscattering spectrometry (RBS) has been used to investigate the film structure and depth distribution of the constituents. A strong broad PL band centered at 1540 nm, corresponding to the 4I13/2 fi 4I15/2 transitions, has been found under excitations at 809, 791, 662 and 532 nm. Annealing at 230 oC leads to an improvement of the PL intensity by ~ 50 %. The observed effects are discussed in terms of the glass structure becoming damaged during ion implantation, and the partial restoration of the structure by subsequent annealing..

Keywords

Chalcogenide glasses, Rare earth doping, Photoluminescence, Thin films, Ion implantation.

Submitted at: April 12, 2005
Accepted at: May 26, 2005

Citation

Z. G. Ivanova, K. Koughia, D. Toncheva, J. C. Pivin, S. O. Kasap, PHOTOLUMINESCENCE IN Er-IMPLANTED AMORPHOUS Ge-S-Ga THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1271-1276 (2005)