"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

PHOTOLUMINESCENCE OF Er3+ IONS IN (GeS2)80(Ga2S3)20 GLASSES

Z. G. Ivanova1,* , K. Koughia2, Z. Aneva1, D. Tonchev2, V. S. Vassilev3, S. O. Kasap2

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria
  2. Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, S7N 5A9, Canada
  3. Department of Semiconductors, University of Chemical Technology and Metallurgy, 8 Kl. Ohridski Blvd., 1756 Sofia, Bulgaria

Abstract

The photoluminescence (PL) efficiency of (GeS2)80(Ga2S3)20 glasses doped with 0.17, 0.35 and 1.05 at % Er has been investigated. The PL has been excited by laser diodes operating at 982 and 532 nm. These wavelengths correspond to direct excitation of 4I15/2 → 4I11/2 transitions in Er3+ ions and to absorption in the host material, respectively. The PL band is presented as a sum of four Gaussian sub-bands. For all compositions, the PL band excited at 532 nm has been found to be narrower than that excited at 982 nm. The effect of broadening can be attributed to the development of broad Gaussian sub-bands centered at 1553 and 1600 nm, with the simultaneous reduction of sharp band centered at 1540 nm..

Keywords

Chalcogenide glasses, Rare earth doping, Photoluminescence.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

Z. G. Ivanova, K. Koughia, Z. Aneva, D. Tonchev, V. S. Vassilev, S. O. Kasap, PHOTOLUMINESCENCE OF Er3+ IONS IN (GeS2)80(Ga2S3)20 GLASSES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 349-352 (2005)