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PHOTOLUMINESCENCE OF HYDROGENATED AMORPHOUS SILICON SUBOXIDES

A. Bacıoglu1,* , A. O. Kodolbas1, Ö. Öktü1

Affiliation

  1. Hacettepe University, Faculty of Engineering, Department of Physics Engineering, 06800-Beytepe, Ankara, Turkey

Abstract

The photoluminescence properties of a hydrogenated amorphous silicon suboxide film with 26.2 at.% oxygen has been studied in the as-deposited state and after post annealing procedures at elevated temperatures. Two typical silicon suboxide PL bands, at 2.1 eV and at 1.85 eV, were observed. From temperature dependent measurements, it was demonstrated that the intensity of the 2.1 eV PL band is thermally activated, with an activation energy of 0.49 eV. The 2.1eV band is attributed to oxygen related defect transitions, whereas the 1.85 eV band may be attributed to localised to localised state transitions..

Keywords

Silicon suboxides, a-SiOx:H, Photoluminescence, CPM.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

A. Bacıoglu, A. O. Kodolbas, Ö. Öktü, PHOTOLUMINESCENCE OF HYDROGENATED AMORPHOUS SILICON SUBOXIDES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 499-502 (2005)