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POINT DEFECTS IN CRYSTALLINE AND AMORPHOUS SILICON

D. Wagner1,*

Affiliation

  1. University “Politehnica”, Department of Physics, 313 Splaiul Independentei, 77206-Bucharest, Romania

Abstract

The point defects in crystalline and non-crystalline state of tetrahedrally bonded semiconductors show both common features and differences. The case of crystalline and amorphous silicon is discussed. The single point defect and small clusters of point defects are analyzed on the basis of a simulated crystalline lattice and amorphous network of silicon..

Keywords

Semiconductors, Amorphous silicon, Point defects, Modeling.

Submitted at: Jan. 31, 2004
Accepted at: March 15, 2004

Citation

D. Wagner, POINT DEFECTS IN CRYSTALLINE AND AMORPHOUS SILICON, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 1, pp. 345-347 (2004)