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POLYCRYSTALLINE Si FILMS PREPARED BY Al- AND Ni- INDUCED CRYSTALLISATION

D. Dimova-Malinovska1,*

Affiliation

  1. Central Laboratory for Solar Energy and New Energy Sources, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., 1784 Sofia, Bulgaria

Abstract

Metal induced crystallization of amorphous Si (a-Si) has been studied for differently deposited structures and metal concentrations - glass/a-Si/Al, glass/Al/a-Si, glass/Al/a-Si+Al and glass/a-Si+Ni. The films were deposited at various substrate temperatures (Ts) by RF magnetron sputtering, and the structures were isothermally annealed at temperatures below that of the a-Si solid phase crystallization. The annealing was implemented in air, vacuum, N2, N2+H2 or H2. Raman spectroscopy, X-ray Diffraction Spectroscopy and Rutherford Back-Scattering were used to study the crystallinity of the resulting polycrystalline Si (poly-Si) films. The influence of the technological conditions on the structure of the films was studied. The results indicate that the structure of the poly-Si films is improved when the annealing is performed in an atmosphere containing H2. It is supposed that H2 stimulates the crystalline grain growth during annealing, by increasing the diffusion rates of Al and Si. A mechanism for metal induced crystallization is suggested to explain the results..

Keywords

Polycrystalline Si films, Raman spectroscopy, Metal Induced Crystallization.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

D. Dimova-Malinovska, POLYCRYSTALLINE Si FILMS PREPARED BY Al- AND Ni- INDUCED CRYSTALLISATION, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 99-106 (2005)