"

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

PREIONISED PULSED MAGNETRON DISCHARGES FOR IONISED PHYSICAL VAPOUR DEPOSITION

M. Ganciu1,2,3,* , S. Konstantinidis2, Y. Paint4, J. P. Dauchot2, M. Hecq2, L. de Poucques1, P. Vašina1,5, M. Meško1,5, J. C. Imbert1, J. Bretagne1, M. Touzeau1

Affiliation

  1. Laboratoire de Physique des Gaz et des Plasmas, Université Paris-Sud, 91405 ORSAY Cedex France
  2. Laboratoire de Chimie Inorganique et Analytique, Materia-Nova, Av. Copernic, B-7000 MONS, Belgique
  3. National Institute of Laser, Plasma and Radiation Physics, MG 36, Magurele, Bucharest, Romania
  4. Unité de Microscopie Electronique, Materia Nova, Av. Copernic, B-7000 MONS, Belgique
  5. Department of Physical Electronics, Masaryk University, Brno, 611 37, Czech Republic

Abstract

To improve the quality of thin film deposition by magnetron discharges, particularly by an effective ionisation of the sputtered vapour, we developed a new ionised physical vapour deposition (IPVD) method based on preionised pulsed magnetron discharges. By superposition of continuous, microwave or RF discharge, with a fast pulsed abnormal discharge, target current density is extended to very high values during short pulses. Efficient vapour ionisation is obtained and due to the current pulse shortness, electric arc development is avoided..

Keywords

Pulsed magnetron, Preionization, Transport processes.

Submitted at: Jan. 21, 2005
Accepted at: Sept. 22, 2005

Citation

M. Ganciu, S. Konstantinidis, Y. Paint, J. P. Dauchot, M. Hecq, L. de Poucques, P. Vašina, M. Meško, J. C. Imbert, J. Bretagne, M. Touzeau, PREIONISED PULSED MAGNETRON DISCHARGES FOR IONISED PHYSICAL VAPOUR DEPOSITION, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 5, pp. 2481-2484 (2005)