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PREPARATION AND CHARACTERIZATION OF SnSe NANOCRYSTALLINE THIN FILMS

J. Sharma1, G. Singh1, A. Thakur1, G. S. S. Saini1, N. Goyal1, S. K. Tripathi1,*

Affiliation

  1. Centre of Advanced Study in Physics, Panjab University, Chandigarh-160 014, India

Abstract

The present paper reports the preparation of nanocrystalline SnSe (n-SnSe) thin films by thermal evaporation of the material in the presence of a carrier gas. The normal incidence transmission spectra of the substrate with and without n-SnSe thin film have been recorded. The absorption coefficient ( ) has been calculated using the transmission curve and the extinction coefficient (k) has been calculated using these values of . Band gap (Eg) of thin film has been calculated from the plots of ( h )2 vs h . The value of the measured band gap has been utilized to calculate the crystallite size in the nanocrystalline film. The electrical measurements (dc conductivity and photoconductivity) have been done in the temperature range 295-350 K. DC conductivity ( d) measurement indicates that the conduction in this material is through an activated process having single activation energy in the investigated temperature range. Steady state photoconductivity ( ph) measurements have been done as a function of temperature (295-350 K) at intensity 1035 Lux. Transient photoconductivity measurements show that the decay of photocurrent is quite slow..

Keywords

Nanocrystalline, Optical properties, Photosensitivity, Photoconductivity.

Submitted at: July 4, 2005
Accepted at: July 21, 2005

Citation

J. Sharma, G. Singh, A. Thakur, G. S. S. Saini, N. Goyal, S. K. Tripathi, PREPARATION AND CHARACTERIZATION OF SnSe NANOCRYSTALLINE THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 2085-2094 (2005)