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PREPARATION AND CHARACTERIZATION OF THE JUNCTION n-CuInSe2/p-CdTe SOLAR CELL BY THE STACKED ELEMENTAL LAYER (SEL) TECHNIQUE

A. Ashour1,* , A. A.Ramadan2, K. Abd EL-Hady1, A. A. S. Akl1

Affiliation

  1. Physics Department, Faculty of Science, Minia University, Minia, Egypt
  2. Physics Department, Faculty of Science, Helwan University, Helwan, Cairo, Egypt

Abstract

CuInSe2/CdTe heterojunctions were prepared by stacking elemental layers (SEL) of Cu, In and Se onto p-CdTe single crystals in vacuum and followed by annealing at 300 oC in air for heating time 1h. Heterojunction solar cells were fabricated using the configuration Au/CuInSe2/CdTe/Al. The electrical properties of the CuInSe2/CdTe heterojunctions were studied by means of current-voltage (I-V) measurements carried out at different temperatures. The dark I-V characteristics show that a recombination mechanism controls the transport of charge carriers across the junction. On illumination, appreciable change in the I-V characteristics and photovoltaic effects were observed. Open circuit voltage (VOC) of 285 mV, short circuit current density (JSC) of 41 mA cm-2. The solar energy conversion efficiency gave a value of about 4.2% without any attempt at optimisation of the cell parameters were produced by the cells..

Keywords

Heterojunction, CuInSe2/CdTe, SEL Technique, I-V Characteristics, Illumination.

Submitted at: Feb. 2, 2005
Accepted at: May 26, 2005

Citation

A. Ashour, A. A.Ramadan, K. Abd EL-Hady, A. A. S. Akl, PREPARATION AND CHARACTERIZATION OF THE JUNCTION n-CuInSe2/p-CdTe SOLAR CELL BY THE STACKED ELEMENTAL LAYER (SEL) TECHNIQUE, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1493-1498 (2005)