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Preparation and properties of SnO2:F thin films

M. GIRTAN1,2,* , A. BOUTEVILLE2, G. G. RUSU1, M. RUSU1

Affiliation

  1. Faculty of Physics, “Al. I. Cuza” University of Iasi, Romania
  2. LPMI, ENSAM, Angers, France

Abstract

High quality fluorine doped tin oxide films have been prepared by an improved spray process in which the droplets are produced using an ultrasonic atomiser. Films with thickness about 0.1 and 1.5 µm were deposited on soda lime glass substrates. The microstructure of these thin films is analysed by XRD and SEM. The transmittance and reflectance spectra in the 260-2600nm spectral region are presented. The minimum of the electrical resistivity is 800 µΩcm..

Keywords

SnO2:F thin films, XRD, SEM, Transmittance spectrum, Reflectance spectrum.

Submitted at: Oct. 14, 2005
Accepted at: Jan. 26, 2006

Citation

M. GIRTAN, A. BOUTEVILLE, G. G. RUSU, M. RUSU, Preparation and properties of SnO2:F thin films, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 1, pp. 27-30 (2006)