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PREPARATION OF TiOX THIN FILMS BY REACTIVE PULSED-LASER ABLATION

D. Luca1,*

Affiliation

  1. Faculty of Physics, Al. I. Cuza University Ia i, Bd. Carol I 11, 700506, Iasi, Romania

Abstract

We report here on the characterisation of TiOx thin films grown on glass and (100)Si substrates by reactive pulsed-laser ablation of a metallic Ti target. The specimens were prepared at two substrate temperatures (150 °C and 500 °C) under O2 atmosphere with pressures ranging between 1 and 100 mTorr. The films grown at 150 °C change from a mixture of nano-crystalline suboxides dispersed in an amorphous Ti film (when p < 50 mTorr) towards a mixture of anatase TiO2 nano-crystalline phase dispersed in an amorphous phase of Ti and its suboxides (when p 50 mTorr). The films deposited at 500 °C mainly consist of a mixture of crystalline (101) TiO2 anatase and amorphous phases. The films structure and composition are interpreted in terms of successive oxidation processes a) in the ablation spot; b) in the plasma plume, and c) during condensation at substrate site..

Keywords

Reactive laser ablation, TiOx thin films, Anatase, Optical transmittance, Photocatalytic efficiency.

Submitted at: Aug. 18, 2004
Accepted at: March 23, 2005

Citation

D. Luca, PREPARATION OF TiOX THIN FILMS BY REACTIVE PULSED-LASER ABLATION, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 2, pp. 625-630 (2005)