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Preparation, properties and electrical switching effects in GeSb2Te4 and (GeSb2Te4)90(SnSe2)10 amorphous films

A. LŐRINCZI1,*

Affiliation

  1. National Institute R&D of Materials Physics, 777125, Bucharest-Magurele, P. Box. MG. 7, Romania

Abstract

Thin films of composition GeSb2Te4 and (GeSb2Te4)90(SnSe2)10 have been prepared by pulsed laser deposition and characterized by X-ray diffraction and scanning electron microscopy. The electrical switching was revealed in both compositions..

Keywords

Ge-Sb-Te, Phase change memory material, Electrical switching, XRD, SEM.

Submitted at: Sept. 6, 2007
Accepted at: Sept. 18, 2007

Citation

A. LŐRINCZI, Preparation, properties and electrical switching effects in GeSb2Te4 and (GeSb2Te4)90(SnSe2)10 amorphous films, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 9, pp. 2970-2972 (2007)