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PROPERTIES OF Cr AND Mo THIN FILMS DEPOSITED BY RF SPUTTERING

Ch. Dicov1, M. Marinov2, H. Maciel3, K. Grigorov4,* , I. Nedkov4, G. Beshkov5

Affiliation

  1. Central Lab. of Solar Energy and New Energy Structures, Sofia, Bulgaria
  2. Institute of General and Inorganic Chemistry, Sofia Bulgaria
  3. Technological Institute of Aeronautics – S. José dos C-SP, Brazil
  4. Institute of Electronics, Sofia, Bulgaria
  5. Institute of Solid State Physics, Sofia, Bulgaria

Abstract

This report summarizes our recent efforts to produce a good quality Cr and Mo thin films for use in Cu(InGa)Se2 (CIGS) based solar cells. The surface morphology and the resistivity of Cr and Mo films with various thicknesses ranging from 280 to 750 nm were investigated. The films were deposited in a Tokyda-CPF-4EF RF sputtering system, at powers ranging from 100 to 250 W in a 1 Pa argon atmosphere. The substrate temperature was about 200 oC. The deposition rate did not exceed 900 nm/h. The morphology of the films was studied by SEM, and the resistivity was measured by a Four Point Probe method. A correlation was established between the surface morphology (grain size), the resistivity, and the deposition parameters of the Cr and Mo-based layers..

Keywords

Photovoltaic devices, Cu(InGa)Se2, Cr – Mo-based contacts.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

Ch. Dicov, M. Marinov, H. Maciel, K. Grigorov, I. Nedkov, G. Beshkov, PROPERTIES OF Cr AND Mo THIN FILMS DEPOSITED BY RF SPUTTERING, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 385-387 (2005)