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PROPERTIES OF HIGH-POROSITY SOL-GEL DERIVED INDIUM-TIN OXIDE FILMS

T. F. Stoica1,* , M. Gartner2, T. Stoica1, M. Losurdo3, V. S. Teodorescu1, M. G. Blanchin4, M. Zaharescu2

Affiliation

  1. National Institute of Materials Physics, P.O.B. Mg.7, Str. Atomistilor 105bis, 77125- Bucharest-Magurele, Romania
  2. Institute of Physical Chemistry of the Romanian Academy of Sciences, Splaiul Independentei 202, 77208-Bucharest, Romania
  3. Plasma Chemistry Research Center-CNR, via Orbona, 4 –70126 Bari, Italy
  4. Laboratoire de Physique de la Matiere Condensee et de Nanostructures, Universite Claude Bernard Lyon 1 $3 Boulevard du 11 novembre 1918, 69622 Villeurbanne Cedex, France

Abstract

Indium-tin oxide (ITO) sol-gel films have been obtained with the void concentration up to 50%. The films are nanostructured with nanocrystals of In2O3:Sn and nanovoids. The information obtained from derivative thermo-gravimetry was used to design the annealing program for ITO film formation with a high void concentration. Multilayer films were obtained by successive deposition. The thickness of one layer was about 9 nm. By successive depositions, the void density of the film is reduced. Quantitative analysis of the void density has been performed by spectroscopic ellipsometry. The conductivity of the films can be varied in a large range by annealing in vacuum or in air, at temperature higher than 200 °C..

Keywords

Sol-gel method, Indium-tin oxide, Thin films.

Submitted at: Aug. 29, 2005
Accepted at: Sept. 22, 2005

Citation

T. F. Stoica, M. Gartner, T. Stoica, M. Losurdo, V. S. Teodorescu, M. G. Blanchin, M. Zaharescu, PROPERTIES OF HIGH-POROSITY SOL-GEL DERIVED INDIUM-TIN OXIDE FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 5, pp. 2353-2358 (2005)