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PROPERTIES OF REACTIVE O2 ION BEAM SPUTTERED TiO2 ON Si WAFERS

S. Ulucan1, G. Aygun2, L. Ozyuzer1,* , M. Egilmez1, R. Turan2

Affiliation

  1. Department of Physics, Izmir Institute of Technology, Urla, 35430, Izmir, Turkey
  2. Department of Physics, Middle East Technical University, 06531, Ankara, Turkey

Abstract

TiO2 thin films were deposited on silicon (100) p-type wafers, using the reactive ion beam sputtering method in high vacuum as an alternative to conventional Argon ion beam sputtering in an O2 environment. Oxygen ions with 1000 eV energy were formed in a thruster and bombarded a high purity Ti target. The molecules of TiO2 were deposited on a Si (100) wafer at various substrate temperatures. The structural and optical properties were analyzed using Fourier Transform Infrared Spectroscopy in the range of 400–4000 cm-1. An ellipsometer was used to measure the thickness and refractive index of the deposited films. In order to determine the dielectric constant and capacitance of the deposited TiO2, the electrical properties were studied using an MOS capacitor. The effects of substrate temperature and deposition time on the dielectric properties of TiO2 are discussed..

Keywords

TiO2, Ion Beam Deposition, CMOS.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

S. Ulucan, G. Aygun, L. Ozyuzer, M. Egilmez, R. Turan, PROPERTIES OF REACTIVE O2 ION BEAM SPUTTERED TiO2 ON Si WAFERS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 297-300 (2005)