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PROPERTIES OF THE SiC/Si STRUCTURE PREPARED BY RAPID THERMAL ANNEALING OF AMORPHOUS HYDROGENATED CARBON LAYERS DEPOSITED ON CRYSTALINE SILICON

S. S. Georgiev1,* , G. Beshkov1, D. Sueva2, E. Manolov1

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee blvd., Sofia 1784, Bulgaria
  2. Sofia University, Faculty of Physics, 5 J. Boucheir blvd., Sofia 1126, Bulgaria

Abstract

We investigated the SiC interface layer formation by the rapid thermal annealing (RTA) of a-C:H/c-Si (p-type) structures at 800, 1000 and 1200 oC for 3 minutes. The a-C:H layers, about 120 nm thick, were deposited by HF PECVD from methanol at a substrate temperature of 3400C. The creation of a SiC interface layer was established by Raman spectroscopy. I-V and C-V measurements showed the presence of a heterojunction..

Keywords

Carbon layer, Raman spectra, Heterostructure, Electrical properties.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

S. S. Georgiev, G. Beshkov, D. Sueva, E. Manolov, PROPERTIES OF THE SiC/Si STRUCTURE PREPARED BY RAPID THERMAL ANNEALING OF AMORPHOUS HYDROGENATED CARBON LAYERS DEPOSITED ON CRYSTALINE SILICON, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 373-376 (2005)