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PULSED LASER DEPOSITION OF CHALCOGENIDE FILMS FOR NONLINEAR PHOTONIC APPLICATIONS

A. Zakery1,*

Affiliation

  1. Department of Physics, College of Sciences, Shiraz University, Shiraz 71454, Iran

Abstract

Nonlinear optical properties of Ge33As12Se55 pulsed-laser-deposited (PLD) films are presented. Degenerate four-wave mixing and Z-scan techniques were used to obtain the nonlinear refractive index and absorption coefficient of germanium arsenic selenide films. Ge33As12Se55 films are highly nonlinear, and hence are suitable for ultra-fast all-optical switching applications. We designed and simulated a nonlinear directional coupler switch in PLD films. Current status of device fabrication and nonlinear properties of PLD deposited chalcogenide films is also discussed..

Keywords

Nonlinear photonic devices, PLD Chalcogenide films, All-optical switching, Chalcogenide films.

Submitted at: April 19, 2005
Accepted at: May 26, 2005

Citation

A. Zakery, PULSED LASER DEPOSITION OF CHALCOGENIDE FILMS FOR NONLINEAR PHOTONIC APPLICATIONS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1143-1155 (2005)