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Pulsed laser deposition of SrZrO3 as a buffer layer for ferroelectric thin films

D. MIU1,* , J. C. MARTINEZ1, M. MAIER2, H. ADRIAN2

Affiliation

  1. National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG-36, Bucharest, Romania
  2. Institut fur Physik, Johannes Gutenberg Universität Mainz, 55099 Mainz, Germany

Abstract

SrZrO3 (SZO) is a material that has recently received much attention due to properties such as high dielectric constant and switching between resistance states. Our interest was in the possible use of SZO as a buffer layer on various substrates for the epitaxial growth of ferroelectric thin films. SZO was deposited by laser pulses onto SrTiO3 and Si substrates under various deposition conditions. SZO deposited on SrTiO3 substrates exhibits highly oriented c-axis epitaxial growth, as evidenced by X-ray diffraction. A dependence of the crystalline properties of the deposited films on the deposition temperature was observed. In depositing SZO directly onto Si substrates, we paid attention to a possible reaction of Zr with the native amorphous silicon dioxide layer. Unfortunately, no such reaction occurs in the deposition conditions we used, which results in the presence of a thin layer of silicon dioxide, and an amorphous SZO film. When SZO was deposited on the top of YSZ/Si , the silicon dioxide was completely removed from the surface of the silicon substrate, and a-axis orientation growth was possible. This result is very important for the subsequent growth of ferroelectric thin films such as SrBi2Ta2O9, which present a large anisotropy of the ferroelectric properties, with much better results for a-axis orientation..

Keywords

SrZrO3, Pulsed Laser Deposition, Thin films, Ferroelectric.

Submitted at: Oct. 14, 2005
Accepted at: Jan. 26, 2006

Citation

D. MIU, J. C. MARTINEZ, M. MAIER, H. ADRIAN, Pulsed laser deposition of SrZrO3 as a buffer layer for ferroelectric thin films, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 1, pp. 24-26 (2006)