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RADIATIVE RECOMBINATION PROCESSES IN CHALCOGENIDE GLASSES DEDUCED BY LIFETIME MEASUREMENTS OVER 11 DECADES

T. Aoki1,* , D. Saito1, K. Ikeda1, S. Kobayashi1, K. Shimakawa2

Affiliation

  1. Dept. of Electronics and Computer Engineering & Joint Research Center of High-technology, Tokyo Polytechnic University, Atsugi 243-0297, Japan
  2. Department of Electrical and Electronic Engineering, Gifu University, Gifu 501-1193, Japan

Abstract

The paper presents universality of photoluminescence (PL) mechanisms among chalcogenide- and tetrahedral-amorphous semiconductors. In addition to the previous results (double-peaked lifetime distribution) in PL in the chalcogenide glasses As2Se3, As2S3 and Se, we found a new component in the lifetime range from 10-3 to 102s by the wide-band quardrature frequency resolved spectroscopy (QFRS) at 3.7 K and above-band gap excitation with generation rates G below ~1019 cm-3s-1. We assign it to nongeminate or distant-pair (DP) recombination. All these phenomena are very similar to those obtained in a-Si:H and a-Ge:H. Application of magnetic field on a-As2Se3 affects PL lifetime distribution in the same way as on a-Si:H, i.e. enhancement of the triplet-exciton component and weakening of the new component, which support the above explanation..

Keywords

PL, Lifetime, Distant-pair, Exciton, Spin, PL-fatigue.

Submitted at: July 4, 2005
Accepted at: July 21, 2005

Citation

T. Aoki, D. Saito, K. Ikeda, S. Kobayashi, K. Shimakawa, RADIATIVE RECOMBINATION PROCESSES IN CHALCOGENIDE GLASSES DEDUCED BY LIFETIME MEASUREMENTS OVER 11 DECADES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 1749-1757 (2005)