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RAMAN SCATTERING STUDIES ON POLYCRYSTALLINE Cd0.9Zn0.1Te THIN FILMS

M. G. Sridharan1,* , M. Mekaladevi1, Sa. K. Narayandass1, D. Mangalaraj1, H. Chul Lee2

Affiliation

  1. Thin Film Laboratory, Department of Physics, Bharathiar University, Coimbatore – 641 046. India
  2. Department of Electrical Engineering and Computer Science, Korea Advanced Institute of Science and Technology, Taejon – 305 701, Korea

Abstract

Polycrystalline Cd0.9Zn0.1Te thin films were prepared by vacuum evaporation onto well cleaned glass substrates maintained at 300, 373 and 473 K. X-ray diffraction studies revealed that the films have zinc blende structure with preferential (111) orientation. Raman peak of the as-deposited film appeared at 140.30 cm-1 and 159.65 cm-1 were for the transverse optic (TO) and longitudinal optic (LO) phonons respectively. The XRD patterns of the higher substrate temperature deposited films exhibited an increase in the intensity of the (111) peak and decrease in the FWHM. The Raman peak position did not change appreciably, whereas the peak intensity increases and the FWHM decreases for the higher substrate temperature and the results are attributed to the improvement of crystallinity of the films on thermal treatment..

Keywords

Cd0.9Zn0.1Te films, Vacuum evaporation, XRD, AFM, Raman scattering.

Submitted at: April 21, 2005
Accepted at: May 26, 2005

Citation

M. G. Sridharan, M. Mekaladevi, Sa. K. Narayandass, D. Mangalaraj, H. Chul Lee, RAMAN SCATTERING STUDIES ON POLYCRYSTALLINE Cd0.9Zn0.1Te THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1479-1482 (2005)