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Room temperature visible luminescence from amorphous GaN:Tb deposited by DC magnetron sputtering

XIAOJUN PAN1, ERQING XIE1,* , HUI LI1, LU JIA1, ZHENXING ZHANG1

Affiliation

  1. School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, P. R. China

Abstract

The GaN and GaN:Tb thin films have been prepared by direct current (DC) planar magnetron sputtering deposition under the same conditions. GaN thin film was analyzed by photoluminescence (PL) measurements, Fourier Transform Infrared (FTIR) absorption and UV-Vis transmission. FTIR result indicates the main absorbance is Ga-N stretching vibration. From UV-Vis result the optical band gap of the film has been calculated as 3.85eV and no yellow and green emission was observed in PL spectrum. The GaN:Tb film was characterized by X-ray diffraction (XRD) and photoluminescence (PL) spectra. XRD shows the structure of thin film as being amorphous. 4f transitions of Tb3+ visible green photoluminescence have been obtained at room temperature: 5D4－7F6(497.0 nm), 5D4－7F5 (552.4 nm),5D4－7F4(594.2nm), 5D4－7F3(627.8 nm)..

Keywords

Amorphous GaN, Tb3+ doped, Photoluminescence, Magnetron sputtering.

Submitted at: May 30, 2007
Accepted at: Sept. 18, 2007

Citation

XIAOJUN PAN, ERQING XIE, HUI LI, LU JIA, ZHENXING ZHANG, Room temperature visible luminescence from amorphous GaN:Tb deposited by DC magnetron sputtering, Journal of Optoelectronics and Advanced Materials Vol. 9, Iss. 9, pp. 2759-2762 (2007)