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SiOx thin films deposited by r.f. magnetron reactive sputtering: structural properties designed by deposition conditions

N. TOMOZEIU1,*

Affiliation

  1. R&D Department, Océ Technologies B.V., P.O. Box 101, 5900 MA Venlo, The Netherlands

Abstract

The main subjects studied on this paper are the influence of the rf power, deposition pressure and oxygen partial pressure on the sputtering rate of silicon and on the oxidation process during the a-SiOx deposition by magnetron reactive sputtering. It was found that the r.f. power influences drasticaly both: the sputtering and the oxidation processes, while the deposition pressure determines the sputtering rate but, for the investigated range, does not influence the oxidation process. No influence on the sputtering rate has been seen for the oxygen partial pressure within metallic mode of plasma, but it determines the composition of the deposited SiOx layer. The sputtering deposition conditions determine both the layer composition and the internal SiOx structure. Infrared spectroscopy performed on samples with the same composition but deposited under different input parameters revealed different shape of the spectra. Spinodal decomposition of the deposited SiOx material induced by the particles’ bombardment (ions, fast neutrals and UV photons) on the surface deposition seems to happen during the deposition process..

Keywords

Silicon suboxide, Reactive sputtering, IR spectroscopy, Structural properties, Spinodal decomposition.

Submitted at: Jan. 8, 2006
Accepted at: March 23, 2006

Citation

N. TOMOZEIU, SiOx thin films deposited by r.f. magnetron reactive sputtering: structural properties designed by deposition conditions, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 2, pp. 769-775 (2006)