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SMD PACKAGED ZnSSe ULTRA-VIOLET SCHOTTKY PHOTODETECTORS WITH HIGH DETECTIVITY

L. S. Mak1, S. K. Chan1, G. K. L. Wong1, I. K. Sou1,*

Affiliation

  1. Department of Physics, The Hong Kong University of Science and Technology Clear Water Bay, Kowloon, Hong Kong, People’ China

Abstract

We report the 1/f noise and shot noise studies on molecular beam epitaxy (MBE)-grown ZnSSe UV detectors packaged in SMD leadframes for three detectors with different thicknesses of the active layer and the top electrode pad. The highest onset of reverse bias for the appearance of 1/f noise is -27.5V and the highest dark resistances at zero bias is R0 = 3.7 × 1013W. The observed difference in their noise performance implies that the increase of the thicknesses of both the active layer and the top electrode pad can significantly lower the noise levels and in turn lead to higher detectivity. The best detectivity achieved is 8.75·1013 cmHz1/2W-1 in a detector with an active layer of 5000 Å and a top electrode pad of Cr (50Å) / Au (8000Å)..

Keywords

MBE, ZnSSe, Ultra-violet detectors, Noise characteristics, Detectivity.

Submitted at: May 24, 2005
Accepted at: Sept. 22, 2005

Citation

L. S. Mak, S. K. Chan, G. K. L. Wong, I. K. Sou, SMD PACKAGED ZnSSe ULTRA-VIOLET SCHOTTKY PHOTODETECTORS WITH HIGH DETECTIVITY, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 5, pp. 2763-2768 (2005)