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SOME PECULARITIES OF PHOTO-INDUCED CHANGES OF THE OPTICAL GAP IN AMORPHOUS Ge13.3As35.7S51 FILMS

M. Štábl1, L.Tichý1,*

Affiliation

  1. oint Laboratory of Solid State Chemistry of Institute of Macromolecular Chemistry, Academy of Sciences of Czech Republic and University of Pardubice, 532 10 Pardubice, Czech Republic

Abstract

Thin amorphous films of Ge13.3As35.7S51 were prepared by thermal evaporation. It is suggested that the film network is composed by various entities of which molecular-like entities of dimorphite (As4S3) were unambiguously identified using Raman spectroscopy. Photo-induced changes of the short wavelength optical absorption edge were studied. The reversible photo-darkening (the red shift of the optical gap) was observed after the second cycle of annealing-illumination of the film. The magnitude of the true reversible darkening was found only around -80 meV at room temperature. Also partial photo-bleaching was observed..

Keywords

Amorphous Ge-As-S thin film, Photo-induced gap changes.

Submitted at: April 23, 2003
Accepted at: May 8, 2003

Citation

M. Štábl, L.Tichý, SOME PECULARITIES OF PHOTO-INDUCED CHANGES OF THE OPTICAL GAP IN AMORPHOUS Ge13.3As35.7S51 FILMS, Journal of Optoelectronics and Advanced Materials Vol. 5, Iss. 2, pp. 429-438 (2003)