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SOME RECENT PROGRESS IN 3C-SiC GROWTH. A TEM CHARACTERIZATION

E. K. Polychroniadis1,* , A. Andreadou1, A. Mantzari1

Affiliation

  1. Department of Physics, Aristotle University of Thessaloniki, 54124 Thessaloniki, Greece

Abstract

The combination of excellent semiconducting and mechanical properties makes SiC the most promising material for sensors in harsh environments. SiC appears in different polytypes which differ by the successive stacking of elemental double layers. The most important of them are cubic (3C) and hexagonal (4H and 6H) form. There is presently a significant interest for large size 3C-SiC wafers for microelectronic applications. This interest in growing 3C-SiC is split, in the present work, in two directions. The first one is to grow the bulk material and the second to grow it in a thick film form. The aim of the present work is to present the structural characterization by transmission electron microscopy (TEM) of the resulted crystals after some recent progress in growing the cubic SiC polytype in both mentioned forms..

Keywords

Cubic SiC, Transmission Electron Microscopy, Structural characterization.

Submitted at: Sept. 25, 2003
Accepted at: March 15, 2004

Citation

E. K. Polychroniadis, A. Andreadou, A. Mantzari, SOME RECENT PROGRESS IN 3C-SiC GROWTH. A TEM CHARACTERIZATION, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 1, pp. 47-52 (2004)