"
  • Your are not authorized to view this resource!

Cookies ussage consent

Our site saves small pieces of text information (cookies) on your device in order to deliver better content and for statistical purposes. You can disable the usage of cookies by changing the settings of your browser. By browsing our site without changing the browser settings you grant us permission to store that information on your device.

I agree, do not show this message again.

SPACE CHARGE LIMITED CONDUCTION IN a-Se90 Ge10-X InX THIN FILMS*

S. P. Singh1,* , S. Kumar1, A. Kumar2

Affiliation

  1. Department of Physics, Christ Church College, Kanpur-208001, India
  2. Department of Physics, H. B. Technological Institute, Kanpur-208002, India

Abstract

The present paper reports the d.c. conductivity measurements at high electric fields in vacuum evaporated thin films of amorphous Se90Ge10-xInx (x=0,4,6,10). Current-voltage (I-V) characteristics have been measured at various fixed temperatures. In all the samples, at low electric fields, ohmic behaviour is observed. However, at high electric fields (E~104 V/cm), non-ohmic behaviour is observed. An analysis of the experimental data indicates that upto 4 at.% of In, in these materials, space charge limited conduction (SCLC) is observed and beyond it heating effects are dominant due to which SCLC is not found. From the fitting of the data, the density of defect states (DOS) near Fermi level is calculated in the first two samples. The different behaviour of In incorporation with its lower and higher concentration is attributed with the change in structure of Ge-Se-In glassy network..

Keywords

Thin films, Space charge limited conduction, Amorphous Se-Ge-In.

Submitted at: July 13, 2004
Accepted at: Dec. 6, 2004

Citation

S. P. Singh, S. Kumar, A. Kumar, SPACE CHARGE LIMITED CONDUCTION IN a-Se90 Ge10-X InX THIN FILMS*, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 4, pp. 1153-1157 (2004)