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STEADY STATE PHOTOCONDUCTIVITY IN a-Se90Ge10-xInx THIN FILMS

S. Singh1, R. S. Sharma1, R. K. Shukla1, A. Kumar1,*

Affiliation

  1. Department of Physics, Harcourt Butler Technological Institute, Kanpur-208 002, India

Abstract

Temperature and intensity dependence of photoconductivity is studied in a-Se90Ge10-xInx thin films prepared by vacuum evaporation. Temperature dependence of photoconductivity shows a maximum at a particular temperature. The study carried out on intensity dependence of photoconductivity shows that the values of g is found to be between 0.5 and 1.0 for all the samples. This indicates that there exists a continuous distribution of localized state in the mobility gap of a-Se90Ge10-xInx thin films. Composition dependence of steady state photoconductivity shows that photoconductivity as well as photosensitivity is found to be minimum at 4 at. % of In. A discontinuity in various electrical parameters at 4 at. % of In is related to formation of mechanically stabilized structure at a particular average coordination number 2.2. This is consistent with the theory of Phillips and Thorpe for the topological model in case of chalcogenide glasses..

Keywords

Chalcogenide glass, Se-Ge-In, Photoconductivity, Thin films.

Submitted at: June 21, 2004
Accepted at: June 22, 2004

Citation

S. Singh, R. S. Sharma, R. K. Shukla, A. Kumar, STEADY STATE PHOTOCONDUCTIVITY IN a-Se90Ge10-xInx THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 3, pp. 769-776 (2004)