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Strongly enhanced third order nonlinear response of periodically nano-structured silicon-on-insulator (SOI) measured by reflection Z-scan with femtosecond pulses

A. PETRIS1, F. PETTAZZI2, E. FAZIO2, C. PEROZ3, Y. CHEN3, V. I. VLAD1,* , M. BERTOLOTTI2

Affiliation

  1. Inst. Atom. Phys, NILPRP-Romanian Center of Excellence in Photonics, 409 Atomistii Str., 077125 Bucharest, Romania
  2. Univ. "La Sapienza" e INFM, Dipartimento di Energetica, Via Scarpa 16, I-00161 Roma, Italy
  3. Laboratoire de Photonique et de Nanostructures, Group Nanotechnologies & Microfluidics, Centre National de la Recherche Scientifique, Route de Nozay, 91460 Marcoussis, France

Abstract

We measure a strong enhancement of the third order nonlinear response of periodically nano-patterned and un-patterned silicon-on-insulator (SOI) in comparison with that of bulk silicon, using a fast reflection Z-scan setup with a high-repetition rate fs laser (at 800 nm wavelength), and a new procedure for discrimination between electronic and thermal nonlinearities. Our procedure, with the laser working in mode-locked or in c.w. regimes, allows precise measurement of both electronic and thermal nonlinear refractive indices of nano-patterned SOI, un-patterned SOI and bulk silicon. These results could be important for nonlinear optical devices with properties controlled by nano-patterning, in silicon photonics..

Keywords

Silicon-on-insulator (SOI), Periodic nano-structured SOI, Third order optical nonlinearity, Z-scan, silicon photonics.

Submitted at: June 22, 2006
Accepted at: July 20, 2006

Citation

A. PETRIS, F. PETTAZZI, E. FAZIO, C. PEROZ, Y. CHEN, V. I. VLAD, M. BERTOLOTTI, Strongly enhanced third order nonlinear response of periodically nano-structured silicon-on-insulator (SOI) measured by reflection Z-scan with femtosecond pulses, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 4, pp. 1377-1380 (2006)