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STRUCTURAL AND ELECTRICAL PROPERTIES OF ANTIMONY TRISULFIDE THIN FILMS

N. Tigau1,* , G. I. Rusu2, V. Ciupina3, G. Prodan3, E. Vasile4

Affiliation

  1. Faculty of Science, “Dunarea de Jos” University, Galati, R-6200, Romania
  2. Faculty of Physics, “Alexandru Ioan Cuza” University, Iasi, R-6600, Romania
  3. Ovidius” University, Constanta, R-8700, Romania
  4. S.C. METAV S.A., Bucuresti, R-7200, Romania

Abstract

Antimony trisulfide (Sb2S3) thin films were deposited onto glass substrates by thermal vacuum evaporation. The film structure was studied by X-ray diffraction (XRD) technique, transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The films deposited at substrate temperature, Ts=300 K, are amorphous. The films with stable polycrystalline structure can be obtained if subjected, after deposition, to a heat treatment, consisting of several heating/cooling cycles. The sequence of grain growth was found to begin with lognormal grain size distribution. The mechanism of electrical conduction is discussed in terms of Seto`s model for polycrystalline semiconducting films. The values of thermal activation energy of electrical conduction have been determined from the )T/ (f ln 3 10 =σ curves..

Keywords

Antimony trisulfide, Structural properties, Electrical conductivity.

Submitted at: Aug. 18, 2004
Accepted at: March 23, 2005

Citation

N. Tigau, G. I. Rusu, V. Ciupina, G. Prodan, E. Vasile, STRUCTURAL AND ELECTRICAL PROPERTIES OF ANTIMONY TRISULFIDE THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 2, pp. 727-732 (2005)