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Structural and morphological properties of perylene derivatives films on passivated semiconductor substrates

G. SALVAN1,* , S. SILAGHI1, M. FRIEDRICH1, C. HIMCINSCHI1,2, D. R. T. ZAHN1

Affiliation

  1. Institut für Physik, Technische Universität Chemnitz, 09107 Chemnitz, Germany
  2. Max-Planck-Institut für Mikrostrukturphysik, Weinberg 2, D-06120 Halle, Germany

Abstract

Molecules of 3,4,9,10-perylene-tetracarboxylic dianhydride (PTCDA) and N,N’-dimethyl 3,4,9,10-perylene-tetracarboxylic dimide (DiMe-PTCDI) were deposited by organic molecular beam deposition onto passivated Si(100) and GaAs(100) substrates in ultra high vacuum. Raman spectroscopy was employed to investigate in situ the influence of the substrate temperature during film growth on the structural properties and the morphology of organic films. Infrared spectroscopy was used to extract information on the molecular orientation. The results are complemented by those obtained from topographic imaging techniques, such as scanning electron microscopy (SEM) and atomic force microscopy (AFM) results..

Keywords

PTCDA, DiMe-PTCDI, GaAs(100), Si(100), Surface passivation, Raman spectroscopy, AFM, SEM.

Submitted at: Jan. 18, 2006
Accepted at: March 23, 2006

Citation

G. SALVAN, S. SILAGHI, M. FRIEDRICH, C. HIMCINSCHI, D. R. T. ZAHN, Structural and morphological properties of perylene derivatives films on passivated semiconductor substrates, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 2, pp. 604-610 (2006)