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STRUCTURAL CHARACTERIZATION AND OPTOELECTRONIC PROPERTIES OF BORON THERMALLY DIFFUSED SI (400)

E. Frantzeskakis1, P. E. Tsakiridis1, E. Hristoforou1,*

Affiliation

  1. Laboratory of Physical Metallurgy, School of Mining and Metallurgical Engineering National Technical University of Athens 9, Iroon Polytechniou Street, 157 80 Zografou, Athens, Greece

Abstract

Thermal diffusion of boron into silicon single crystal at 1100 oC, followed by annealing, in inert atmosphere, has been investigated with respect to corresponding optoelectronic properties. A layer of boron powder, deposited on a silicon (400) wafer, was used as a dopant source for B. The cold resistance response of the films with respect to light of different wavelengths was used for the quantification of their optoelectronic properties. A correlation between the optoelectronic behavior and the structural characterization of the produced samples was also realized..

Keywords

Silicon (400), Boron, Thermal Diffusion, Optoelectronic properties.

Submitted at: April 27, 2005
Accepted at: May 26, 2005

Citation

E. Frantzeskakis, P. E. Tsakiridis, E. Hristoforou, STRUCTURAL CHARACTERIZATION AND OPTOELECTRONIC PROPERTIES OF BORON THERMALLY DIFFUSED SI (400), Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 3, pp. 1499-1509 (2005)