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STRUCTURAL DEFECTS IN GALLIUM ARSENIDE

Ts. Mihailova1,*

Affiliation

  1. University of Plovdiv, Faculty of Physics, 24 Tzar Asen Str., 4000 Plovdiv, Bulgaria

Abstract

Microscopic defects in low-dislocation LEC GaAs grown under various conditions from stoichiometric and Ga-rich melts are investigated by using eutectic etching with a molten mixture of KOH and NaOH in equal mole concentrations. Dislocations, surface roughness, tetragonally-shaped pits and raised structures are observed in In- or In+Zn-doped crystals. The size and concentration of the raised structures depend on the growth conditions, the stoichiometry of the crystal and post-crystallization cooling. The possible nature and thermal stability of the defects are discussed..

Keywords

Gallium arsenide, Dislocations, Clusters.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

Ts. Mihailova, STRUCTURAL DEFECTS IN GALLIUM ARSENIDE, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 521-524 (2005)