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Structural, electronic transport and optical properties of Zn-doped CdTe thin films

G. G. RUSU1,*

Affiliation

  1. Al. I. Cuza University, Faculty of Physics, Blvd. Carol I, 11, 700506 Iasi, Romania

Abstract

Non-doped and Zn-doped CdTe thin films were deposited by thermal evaporation under vacuum onto unheated glass substrates, using staked layer method. Zn content in the samples was controlled by Zn source temperature that varied in 670 K – 770 K range. The CdTe source temperature was 925 K and was kept constant during deposition of all samples. The XRD studies revealed that the non-doped CdTe films present a cubic oriented (111) polycrystalline structure whereas the as-deposited Zn-doped films are quasi-amorphous. The influence of Zn doping on the electrical conductivity and its temperature dependence and optical absorption spectra of CdTe thin films was investigated. Depending upon Zn content, the electrical conductivity at room temperature for as deposited films varied in the 10 Ω-1m-1 – 104Ω-1m-1 range and was about of six to ten orders of magnitude higher that those of non-doped CdTe films. The annealing up to 800 K determines an important irreversible decrease of doped film conductivity. Also, an increase of the optical band gap (from 1.49 eV for non-doped CdTe films) to 1.67 eV (for Zn-doped annealed samples) was observed..

Keywords

CdZnTe, Thin films, Structure, Electrical properties, Optical properties.

Submitted at: March 15, 2006
Accepted at: May 18, 2006

Citation

G. G. RUSU, Structural, electronic transport and optical properties of Zn-doped CdTe thin films, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 3, pp. 931-935 (2006)