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STRUCTURAL INVESTIGATIONS OF FERROELECTRIC Pb(Zr,Ti)O3 THIN FILMS PREPARED BY SOL-GEL METHOD ON IrO2 ELECTRODES

N. Popescu-Pogrion1,* , J. A. Johnson2, D. Wouters2, G. J. Norga2, O. Van der Biest3

Affiliation

  1. National Institute R&D of Materials Physics, Bucharest-Magurele, P. O. Box MG-07, 77125 Romania
  2. IMEC Kapeldreef 75, 3001 Leuven, Belgium
  3. K. U. Leuven, Kasteelpark Arenberg 44, B-3001 Heverlee, Belgium

Abstract

The crystalline structure, the interlayer and the epitaxial growth stage of PZT/IrO2 deposited by sol-gel method, were investigated using: X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM ) (in bright field (BFTEM) and in dark field (DFTEM)), in correlation with selected area electron diffraction (SAED), high resolution electron microscopy (HRTEM) and X-ray energy dispersive spectroscopy (EDS). On the IrO2 electrodes, preferential (110) orientation was obtained. The crystalline growth of PZT film depends on the initial state of surface at the initial moment and on the relationship between PZT and bottom electrode IrO2. In particular, the interlayer Ir3Ti, formed between PZT and IrO2 plays an important role in the epitaxial growth of PZT film..

Keywords

Pb(Zr,Ti)O3, IrO2, Interface, Electron microscopy.

Submitted at: April 20, 2004
Accepted at: June 22, 2004

Citation

N. Popescu-Pogrion, J. A. Johnson, D. Wouters, G. J. Norga, O. Van der Biest, STRUCTURAL INVESTIGATIONS OF FERROELECTRIC Pb(Zr,Ti)O3 THIN FILMS PREPARED BY SOL-GEL METHOD ON IrO2 ELECTRODES, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 3, pp. 1055-1058 (2004)