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STRUCTURAL STUDY OF Si SAMPLES, BEAM CRYSTALLIZED USING MEDIUM ENERGY ION SCATTERING

Ch. Angelov1, T. Lohner2, M.Takai2, A. Kinomura3, St. Georgiev1,*

Affiliation

  1. Institute for Nuclear Research and Nuclear Energy, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee Blvd., Sofia 1784, Bulgaria
  2. Research Center for Materials Science at Extreme Conditions, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
  3. Research Center for Materials Science at Extreme Conditions, Osaka University, Toyonaka, Osaka 560-8531, Japan

Abstract

The surface structural changes of silicon implanted with heavy ions and ion beam crystallized have been studied by medium-energy ion scattering spectroscopy (MEIS). A toroidal electrostatic analyzer of enhanced energy resolution has been used to detect the scattered ions of a medium-energy He ion beam. Depth profiling results using this technique are compared with those of glancing-angle Rutherford backscattering/channeling (RBS/C) spectra obtained by 1.8 MeV He ions. The dynamics of heavy ions during the ion beam induced epitaxial crystallization (IBIEC) of the implanted amorphous layer as a function of annealing dose was investigated. High depth resolution allows us to track the movement of the implanted species and the crystalline-amorphous (c-a) interface during the beam irradiation. The significant influence of implanted heavy ions on the crystallization process during the subsequent beam annealing is discussed. These results give us deeper insights on IBIEC..

Keywords

MEIS, RBS, IBIEC, Ion implantation, Heavy ions, Impurity effect.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

Ch. Angelov, T. Lohner, M.Takai, A. Kinomura, St. Georgiev, STRUCTURAL STUDY OF Si SAMPLES, BEAM CRYSTALLIZED USING MEDIUM ENERGY ION SCATTERING, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 457-460 (2005)