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STRUCTURE AND ELECTRICAL PROPERTIES OF ELECTRON IRRADIATED CdSe THIN FILMS

L. Ion1,* , S. Antohe1, M. Popescu2, F. Scarlat3, F. Sava2, F. Ionescu2

Affiliation

  1. University of Bucharest, Faculty of Physics, 077125 Mgurele-Ilfov, POB MG-11, Romania
  2. INCDFM Bucharest, 077125 Mgurele-Ilfov, Romania
  3. Valachia University, Târgovi te, Romania

Abstract

Structural and electrical properties of polycrystalline CdSe thin films irradiated with high energy electrons are analyzed. The samples were prepared by vacuum deposition onto optical glass substrate. Their structure and the temperature dependence of the electrical resistance were determined, both before and after irradiation with 6 MeV electrons and fluencies up to 1016 electrons/cm2. There were no measurable changes in the crystalline structure of the films after irradiation. Electrical properties are controlled by a defect level of donor type, possibly a selenium vacancy, with two charge states having ionization energies of about 0.40 eV, respectively 0.22 eV. Irradiation increases significantly the concentration of those defects..

Keywords

Polycrystalline thin films, CdSe, Electron irradiation.

Submitted at: Feb. 28, 2003
Accepted at: March 15, 2004

Citation

L. Ion, S. Antohe, M. Popescu, F. Scarlat, F. Sava, F. Ionescu, STRUCTURE AND ELECTRICAL PROPERTIES OF ELECTRON IRRADIATED CdSe THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 1, pp. 113-119 (2004)