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STRUCTURE OF PULSED-LASER DEPOSITED As50S50 AMORPHOUS THIN FILMS

P. Nemec1,* , J. Jedelský1, M. Frumar1, M. Vlcek2

Affiliation

  1. Department of General and Inorganic Chemistry and Research Center, University of Pardubice, Legions Sq. 565, 53210 Pardubice, Czech Republic
  2. Joint Laboratory of Solid State Chemistry of the University of Pardubice and the Institute of Macromolecular Chemistry of Acad. Sci. of the Czech Republic, Studentská 84, 532 10 Pardubice, Czech R

Abstract

As50S50 thin amorphous films were prepared by the pulsed laser deposition technique. The structure of the films is analyzed in detail on the basis of Raman scattering spectroscopy results. As-deposited layers contain pararealgar (g-As4S4), c-As4S4, -As4S4 molecules, clusters of amorphous arsenic (probably As4 structural units), S2As-AsS2, and As4S5 entities as well as -As4S4, As4S3 molecules, and AsS3 pyramids..

Keywords

Laser deposition, Raman spectra, Amorphous films, Chalcogenides.

Submitted at: Aug. 22, 2005
Accepted at: Sept. 22, 2005

Citation

P. Nemec, J. Jedelský, M. Frumar, M. Vlcek, STRUCTURE OF PULSED-LASER DEPOSITED As50S50 AMORPHOUS THIN FILMS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 5, pp. 2635-2640 (2005)