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STUDY OF a-Si:H TAIL STATE DISTRIBUTIONS THROUGH ANALYTICAL MULTIPLE-TRAPPING MODELLING

E. V. Emelianova1,* , M. Brinza1, V. I. Arkhipov2, G. J. Adriaenssens1

Affiliation

  1. University of Leuven, Halfgeleiderfysica, Celestijnenlaan 200D, B-3001 Leuven, Belgium
  2. IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Abstract

By fitting analytical expressions for the multiple-trapping carrier transport process to experimentally measured transient photocurrent traces from hydrogenated amorphous silicon (a-Si:H) samples, it becomes possible to deduce realistic tail state distributions from the data. For instance: A strong Gaussian component to the valence band distribution of tail states is able to account for the field-independence of the hole drift mobility in a-Si:H samples prepared under high-deposition-rate conditions in an expanding thermal plasma..

Keywords

Hydrogenated amorphous silicon, Tail states, Analytical modelling.

Submitted at: Feb. 9, 2005
Accepted at: March 23, 2005

Citation

E. V. Emelianova, M. Brinza, V. I. Arkhipov, G. J. Adriaenssens, STUDY OF a-Si:H TAIL STATE DISTRIBUTIONS THROUGH ANALYTICAL MULTIPLE-TRAPPING MODELLING, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 2, pp. 951-954 (2005)