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TEMPERATURE DEPENDENCE OF SWITCHING FIELD AND ITS DISTRIBUTION IN BISTABLE MAGNETIC MICROWIRES

M. Vazquez1,* , K. L. Garcia1, A. Zhukov1, R. Varga1,2, P. Vojtanik2

Affiliation

  1. ICMM CSIC, Cantoblanco, 28049 Madrid, Spain
  2. Institute of Physics, Faculty of Sciences, Park Angelinum 9, 04154 Kosice, Slovakia

Abstract

The switching field distribution of the bistable amorphous Fe-based microwires has been investigated at different temperatures. The mean value and width of the switching field distribution decrease with the temperature. From this study, two mechanisms have been found to be responsible for the switching process in amorphous microwires namely, long range order pinning arising from magnetoelastic anisotropy mainly coming from the coating stresses, and short range order pinning at atomic scale defects. The shape of the switching field distribution is solved in terms of the thermoactivated model. Two contributions are also found to form the potential of the closure domain. The temperature dependence of the switching field distribution width has also been solved in terms of the thermoactivated model and was found to be proportional to the switching field..

Keywords

Amorphous microwire, Switching field distribution, Magnetization process.

Submitted at: April 26, 2004
Accepted at: June 10, 2004

Citation

M. Vazquez, K. L. Garcia, A. Zhukov, R. Varga, P. Vojtanik, TEMPERATURE DEPENDENCE OF SWITCHING FIELD AND ITS DISTRIBUTION IN BISTABLE MAGNETIC MICROWIRES, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 2, pp. 581-586 (2004)