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TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE IN Er-DOPED Ge-S-Ga GLASSES

Z. G. Ivanova1,* , D. Tonchev2, R. Ganesan3, E. S. R. Gopal3, S. O. Kasap2

Affiliation

  1. Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria
  2. Department of Electrical Engineering, University of Saskatchewan, 57 Campus Drive, Saskatoon, S7N 5A9, Canada
  3. Department of Physics, Indian Institute of Science, 560 012 Bangalore, India

Abstract

In the present report, we have investigated the influence of the temperature on the photoluminescence (PL) in (GeS2)80(Ga2S3)20 glassy host doped with Er of 0.17, 0.35 and 1.05 at %. In particular, excitation wavelengths of 532 and 514.5 nm, corresponding to absorption predominantly in the host material, have been chosen. A broad PL band centered at ~ 1540 nm has been obtained, which relates to the 4I15/2 fi 4I13/2 transition in the energy Stark splitting diagram of Er3+ state. A narrowing effect of the emission cross-section with decreasing temperature down to 4.2 K has been observed, which leads to the improved PL efficiency. The role of erbium concentration on the PL intensity of the glasses studied has been evaluated. The distribution and changes of the basic structural units have been specified by Raman scattering in the range of 50-550 cm-1..

Keywords

Ge-S-Ga glass, Er3+ emission, Low-temperature photoluminescence, Raman scattering.

Submitted at: July 4, 2005
Accepted at: July 21, 2005

Citation

Z. G. Ivanova, D. Tonchev, R. Ganesan, E. S. R. Gopal, S. O. Kasap, TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE IN Er-DOPED Ge-S-Ga GLASSES, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 4, pp. 1863-1867 (2005)