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THE COMPLETE ELECTRICAL EQUIVALENT CIRCUIT OF A DOUBLE HETEROJUNCTION LASER DIODE USING SCATTERRING PARAMETERS

M. S. Ozyazici1,*

Affiliation

  1. University of Gaziantep, Electrical and Electronics Eng. Dept., 27310 Gaziantep, Turkey

Abstract

In this work, the theory and experimentation involved in a complete electrical characterization of a commercially available semiconductor laser diode, the Hitachi HLP-1400 are described. The intrinsic electrical equivalent circuit of the laser diode is obtained from the small signal ac solution of the coupled rate equations which describe the interplay between the injected carrier and photon densities in the active region of the laser diode about the quiescent point..

Keywords

Laser diode, Scattering parameters, Electrical equivalent circuit.

Submitted at: July 16, 2004
Accepted at: Dec. 6, 2004

Citation

M. S. Ozyazici, THE COMPLETE ELECTRICAL EQUIVALENT CIRCUIT OF A DOUBLE HETEROJUNCTION LASER DIODE USING SCATTERRING PARAMETERS, Journal of Optoelectronics and Advanced Materials Vol. 6, Iss. 4, pp. 1243-1253 (2004)