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The correlation of morphology and surface resistance in porous silicon

SH. D. MILANI1, R. S. DARIANI1,2,* , A. MORTEZAALI1, V. DAADMEHR1, K. ROBBIE2

Affiliation

  1. Department of Physics, Alzahra University, Tehran, 19938, Iran
  2. Department of Physics, Queen’s University, Kingston, Ontario, K7L 3N6, Canada

Abstract

We have studied the dependence of porous silicon morphology on fabrication conditions and the link between morphology, porosity and surface resistance. Porosity of the samples and thickness were determined gravimetrically. Electron microscopy reveals the evolution of porous silicon layer morphology with variation in preparation conditions. Mean size of silicon nano particles decreases with increased silicon porosity as revealed in photoluminescence spectra, I-V characteristics and surface resistance. Results are consistent with the quantum confinement model of porous silicon luminescence..

Keywords

Porous silicon, Surface resistance, Photoluminescence, Nano particles.

Submitted at: April 20, 2006
Accepted at: May 18, 2006

Citation

SH. D. MILANI, R. S. DARIANI, A. MORTEZAALI, V. DAADMEHR, K. ROBBIE, The correlation of morphology and surface resistance in porous silicon, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 3, pp. 1216-1220 (2006)