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The dielectric properties of laser-deposited SrBi2Ta2O9 thin films and related buffer layers

D. MIU1,*

Affiliation

  1. National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG-36, Bucharest, Romania

Abstract

The electrical properties of pulsed laser deposited (PLD) oxide thin films were studied. The oxide materials were SrBi2Ta2O9 (SBT), a material with ferroelectric properties, and related buffer layers for deposition onto silicon substrates, Yttria stabilized zirconia (YSZ) and SrZrO3 (SZO). YSZ films have a relative permittivity which depends on the thickness of the oxygen-deficient layer deposited immediately on top of the silicon substrate, and has values between 4 and 7. SZO has a large relative permittivity of 21, making it a high-k dielectric which is a potential replacement for SiO2 as insulator in CMOS technology. The a-axis oriented SBT layer, however, has a very small memory window (about 80 mV), which could be due to intrinsic limitations of a-axis growth or to insufficiently optimized dielectric properties of the buffer layers..

Keywords

Thin films, Ferroelectric, Fielectric properties, Laser deposition.

Submitted at: May 2, 2006
Accepted at: July 20, 2006

Citation

D. MIU, The dielectric properties of laser-deposited SrBi2Ta2O9 thin films and related buffer layers, Journal of Optoelectronics and Advanced Materials Vol. 8, Iss. 4, pp. 1498-1502 (2006)