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THE EFFECTS OF OXIDE THICKNESS ON THE INTERFACE AND OXIDE PROPERTIES OF METAL-TANTALUM PENTOXIDE-SI (MOS) CAPACITORS

P. Ozdag1, E. Atanassova2, M. Gunes1,*

Affiliation

  1. Department of Physics, Izmir Institute of Technology, Izmir, Turkey
  2. Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia, Bulgaria

Abstract

High dielectric constant tantalum-pentoxide insulating layers were prepared on p-type (100) crystalline silicon wafers using an RF magnetron sputtering technique. Then, metal-oxide semiconductor (Al-Ta2O5-Si) structures were formed with various oxide thickness from 15 to 25 nm. Devices were characterized using the high frequency capacitance-voltage (C-V) spectroscopy method. From the analysis of the high frequency C-V curves, non-ideal effects such as oxide charges and interface trap densities have been evaluated. The results for Ta2O5 layers have been compared with those for conventional SiO2 layers. Interface trap densities were found to be 1.6 ± 0.4×1012 eV-1 cm-2 for Ta2O5 and about 2×1011 eV-1 cm-2 for SiO2 insulating layers. There was no clear thickness dependence of the interface trap densities for the Ta2O5 insulating layers..

Keywords

Metal-oxide-semiconductor (MOS) capacitors, Tantalum pentoxide, Capacitance-voltage spectroscopy.

Submitted at: Dec. 9, 2004
Accepted at: Jan. 26, 2005

Citation

P. Ozdag, E. Atanassova, M. Gunes, THE EFFECTS OF OXIDE THICKNESS ON THE INTERFACE AND OXIDE PROPERTIES OF METAL-TANTALUM PENTOXIDE-SI (MOS) CAPACITORS, Journal of Optoelectronics and Advanced Materials Vol. 7, Iss. 1, pp. 293-296 (2005)